PDS4200H Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI® Features Lower Forward Voltage Drop than Ultrafast Rectifiers Very Low Leakage Current Soft Recovery Characteristics: Softness Factor (tb/ta) 1 (see Figure 8) Highly Stable Oxide Passivated Junction High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1.
Lower Forward Voltage Drop than Ultrafast Rectifiers
Very Low Leakage Current
Soft Recovery Characteristics: Softness Factor (tb/ta) 1 (see
Figure 8)
Highly Stable Oxide Passivated Junction
High Forward Surge Current Capability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®5
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS4200HQ |
DIODES |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
2 | PDS4229W-B |
Fujitsu |
Service Manual | |
3 | PDS4150 |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
4 | PDS4701 |
Potens semiconductor |
N+P Channel MOSFETs | |
5 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
6 | PDS4810 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
7 | PDS4856 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDS4903 |
Potens semiconductor |
P-Channel MOSFETs | |
9 | PDS4904 |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PDS4906 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDS4909 |
Potens semiconductor |
P-Channel MOSFETs | |
12 | PDS4910 |
Potens semiconductor |
N-Channel MOSFETs |