PDS4701 - Potens semiconductor

PDS4701 N+P Channel MOSFETs

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast sw.

Features

 Fast switching
 Green Device Available
 Suit for 4.5V Gate Drive Applications Applications
 DC Fan
 Motor Drive Applications
 Networking
 Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID ID M PD T STG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Curr.