These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
40V, 12A, RDS(ON)=5.8mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Notebook
Load Switch
LED applications
Hand-Held Device
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TA=25℃) Drain Current
– Continuous (TA=70℃) Drain Current
– Pulsed1 Single Pulse Avalanche En.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS4903 |
Potens semiconductor |
P-Channel MOSFETs | |
2 | PDS4906 |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDS4909 |
Potens semiconductor |
P-Channel MOSFETs | |
4 | PDS4910 |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PDS4956 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDS4150 |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
7 | PDS4200H |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
8 | PDS4200HQ |
DIODES |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
9 | PDS4229W-B |
Fujitsu |
Service Manual | |
10 | PDS4701 |
Potens semiconductor |
N+P Channel MOSFETs | |
11 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
12 | PDS4810 |
Potens semiconductor |
Dual N-Channel MOSFETs |