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PDS4910 |
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| Part Number | PDS4910 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications Notebook Load Switch LED applications Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (TA=25℃) Pow... |
| Document |
 PDS4910 Data Sheet
PDF 768.68KB |
| Distributor | Stock | Price | Buy |
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