PDS4701 |
Part Number | PDS4701 |
Manufacturer | Potens semiconductor |
Description | These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... |
Features |
Fast switching Green Device Available Suit for 4.5V Gate Drive Applications Applications DC Fan Motor Drive Applications Networking Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID ID M PD T STG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curr... |
Document |
PDS4701 Data Sheet
PDF 867.01KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS4150 |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
2 | PDS4200H |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
3 | PDS4200HQ |
DIODES |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
4 | PDS4229W-B |
Fujitsu |
Service Manual | |
5 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs |