P6NA60 - STMicroelectronics

P6NA60 STP6NA60

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC.

Features

Unit V DS V DGR V GS ID ID I DM (
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 3.9 2.6 26 45 0.36 2000 A A A W W/ o C V o o 6.5 4.3 26 125 1  -65 to 150 150 C C (
•) Pulse width limited by safe operating area November 1996 1/10 STP6NA60/FI www.DataSheet4U.com THERMAL .