Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Ava.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P6N70 |
Fairchild Semiconductor |
FQP6N70 | |
2 | P6N25 |
ST Microelectronics |
STP6N25 | |
3 | P6N60 |
Fairchild Semiconductor |
FQP6N60 | |
4 | P6N60FI |
ST Microelectronics |
STP6N60FI | |
5 | P6N80 |
Fairchild Semiconductor |
FQP6N80 | |
6 | P6NA60 |
STMicroelectronics |
STP6NA60 | |
7 | P6NA60FI |
ST Microelectronics |
STP6NA60FI | |
8 | P6NA60FP |
STMicroelectronics |
STP6NA60FP | |
9 | P6NB50FP |
STMicroelectronics |
STP6NB50FP | |
10 | P6NB80FP |
ST MICROELECTRONICS |
STP6NB80FP | |
11 | P6NC60 |
ST Microelectronics |
STP6NC60 | |
12 | P6NC60FP |
STMicroelectronics |
STP6NC60FP |