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P6NA60 |
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| Part Number | P6NA60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
Unit
V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 3.9 2.6 26 45 0.36 2000 A A A W W/ o C V o o 6.5 4.3 26 125 1 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November 1996 1/10 STP6NA60/FI www.DataSheet4U.com THERMAL ... |
| Document |
 P6NA60 Data Sheet
PDF 279.61KB |
| Distributor | Stock | Price | Buy |
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