These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP6N80 800 5.8 3.67 23.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P6N25 |
ST Microelectronics |
STP6N25 | |
2 | P6N60 |
Fairchild Semiconductor |
FQP6N60 | |
3 | P6N60FI |
ST Microelectronics |
STP6N60FI | |
4 | P6N70 |
Fairchild Semiconductor |
FQP6N70 | |
5 | P6N70A |
Fairchild Semiconductor |
SSP6N70A | |
6 | P6NA60 |
STMicroelectronics |
STP6NA60 | |
7 | P6NA60FI |
ST Microelectronics |
STP6NA60FI | |
8 | P6NA60FP |
STMicroelectronics |
STP6NA60FP | |
9 | P6NB50FP |
STMicroelectronics |
STP6NB50FP | |
10 | P6NB80FP |
ST MICROELECTRONICS |
STP6NB80FP | |
11 | P6NC60 |
ST Microelectronics |
STP6NC60 | |
12 | P6NC60FP |
STMicroelectronics |
STP6NC60FP |