P6N60FI - ST Microelectronics

P6N60FI STP6N60FI

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLICATIONS s HIGH CUR.

Features

ue 600 600 ± 20 3.8 2.4 24 40 0.32 2000 -65 to 150 150 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area May 1993 1/9 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com STP6N60FI THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.12 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width li.