P6N25 - ST Microelectronics

P6N25 STP6N25

www.DataSheet.co.kr STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI s s s s s V DSS 250 V 250 V R DS( on) < 1Ω < 1Ω ID 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 .

Features

C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP6N25FI 250 250 ± 20 6 4 24 70 0.56  -65 to 150 150 4 2.6 24 35 0.28 2000 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area June 1993 1/10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr STP6N25/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 300 ISOWATT220 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ .