P6NA60FP - STMicroelectronics

P6NA60FP STP6NA60FP

This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-.

Features

GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temperature Max. Operating Junction Temperature Valu e 600 600 ± 30 3.9 2.6 26 40 0.32 2000 -65 to 150 150 Unit V V V A A A W o W/ C V o C o C (
•) Pulse width limited by safe operating area October 1997 1/5 www.DataSheet4U.com STP6NA60FP THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max.