The MTD06N04Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • Low Gate Charge • Simple Drive Requirement • Pb-free lea.
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Symbol
MTD06N04Q8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
MTD06N04Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=15A, VGS=10V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
*3
TA=25℃ TA=70℃
Operating Junction and Storage Tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTD010P03V8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
2 | MTD011N10RH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTD011N10RJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTD011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTD015P10E3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
6 | MTD030N10QJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTD070P15J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
8 | MTD07A04DH8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
9 | MTD07N04E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTD07N04FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTD07N04H8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTD07N04I3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |