CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD010P03V8 Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-.
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A
-30V -40A -10A 11mΩ(typ.) 16mΩ(typ.)
Equivalent Circuit
MTD010P03V8
Outline
Pin 1
DFN3×3
G:Gate S:Source D:Drain
Ordering Information
Device MTD010P03V8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTD011N10RH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTD011N10RJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTD011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTD015P10E3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
5 | MTD030N10QJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTD06N04Q8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTD070P15J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
8 | MTD07A04DH8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
9 | MTD07N04E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTD07N04FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTD07N04H8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTD07N04I3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |