CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTD07N04H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=11A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=9A • Low .
• Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=11A
• Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=9A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
40V 67A 42.4A 14A 11.2A 4.7mΩ(typ) 8.0mΩ(typ)
Symbol
MTD07N04H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTD07N04H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTD07N04E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTD07N04FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTD07N04I3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTD07N04J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTD07N04Q8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTD070P15J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
7 | MTD07A04DH8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
8 | MTD010P03V8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
9 | MTD011N10RH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTD011N10RJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTD011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTD015P10E3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |