MTD011N10RH8 - Cystech Electonics

MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD011N10RH8 Features BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ  Single Drive Requirement  Low On-resistance  Fast Switc.

Features

BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free lead plating and Halogen-free package Symbol MTD011N10RH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p.