MTD015P10E3 - Cystech Electonics

MTD015P10E3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C159F3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTD015P10E3 BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant pac.

Features

• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -107A -8.6A 11.6mΩ 13.7mΩ Symbol MTD015P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTD015P10E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Prod.