MTD030N10QJ3 - Cystech Electonics

MTD030N10QJ3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTD030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27 Page No. : 1/9 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=10A 100V 29A 23mΩ(typ) Features  Low Gate Charge  Simple Drive Requirement  Pb-free lead plating and halogen-free package Equivalent Circuit .

Features

 Low Gate Charge
 Simple Drive Requirement
 Pb-free lead plating and halogen-free package Equivalent Circuit MTD030N10QJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTD030N10QJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD030N10QJ3 CYStek Product Specification CYStech El.