MTD07N04E3 - Cystech Electonics

MTD07N04E3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package RDS(ON)@VGS=10V, ID=20A .

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTD07N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank p.