CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RJ3 Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS.
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
RDS(ON)@VGS=6V, ID=6A
100V 48A
10.6A 8.4 mΩ(typ) 9.4 mΩ(typ)
Symbol
MTD011N10RJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTD011N10RJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTD011N10RH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTD011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTD010P03V8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
4 | MTD015P10E3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
5 | MTD030N10QJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTD06N04Q8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTD070P15J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
8 | MTD07A04DH8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
9 | MTD07N04E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTD07N04FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTD07N04H8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTD07N04I3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |