MTB09N06I3 - CYStech Electronics

MTB09N06I3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB09N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 9.3 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast S.

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package Symbol MTB09N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB09N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB09N06I3 CYStek Product .