CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : 2014.11.10 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTB09N03H8 BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=4.5V, ID=20A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive A.
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
30V 56A 7 mΩ(typ)
13 mΩ(typ)
Symbol
MTB09N03H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTB09N03H8-0-T6-G
Package
DFN5×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB09N06FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB09N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB090N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB090N06J3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB090N06N3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB09P04DFP |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET | |
7 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
8 | MTB001D01-1 |
CSOT |
LCD Module | |
9 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
10 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
11 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |