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CYStech Electronics Corp. Spec. No. : C420J3 Issued Date : 2016.09.07 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB090N06J3 BVDSS ID@ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=3A RDS(ON)@VGS=4V, ID=2.5A 60V 10A 74mΩ(typ) 91mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Ro.
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTB090N06J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB090N06J3-0-T3-G
Package
Shipping
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB090N06J3
CYStek Product Specification
CYStec.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB090N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | MTB090N06N3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB09N03H8 |
Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET |
|
| 4 | MTB09N06FP |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB09N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTB09P04DFP |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET |
|
| 7 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs |
|
| 8 | MTB001D01-1 |
CSOT |
LCD Module |
|
| 9 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 10 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 11 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 12 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |
|