MTB09N06FP - Cystech Electonics

MTB09N06FP N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB09N06FP BVDSS ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C RDSON(TYP) @ VGS=10V, ID=30A Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS com.

Features

• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.8mΩ Symbol MTB09N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTB09N06FP-0-UB-S Package TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank product.