CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTB04N03E3 BVDSS ID Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V.
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A VGS=4.5V, ID=24A
30V 115A 3.8mΩ 6.1mΩ
Symbol
MTB04N03E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=26A, VDD=25V
Repetitive Avalanche Energy L=0.05mH
Total Power Dissipation
TC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB04N03AQ8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB04N03F3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB04N03H8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB04N03J3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB04N03Q8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB040P04N3 |
CYStech |
P-Channel Power MOSFET | |
7 | MTB040P04Q8 |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET | |
8 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
9 | MTB001D01-1 |
CSOT |
LCD Module | |
10 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
11 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
12 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |