MTB040P04N3 - CYStech

MTB040P04N3 P-Channel Power MOSFET

CYStech Electronics Corp. Spec. No. : C967N3 Issued Date : 2017.11.02 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB040P04N3 BVDSS ID@TA=25C, VGS=-10V RDSON@VGS=-10V, ID=-2.5A RDSON@VGS=-4.5V, ID=-2A -40V -3.2A 47mΩ (typ.) 57mΩ (typ.) Features • Advanced trench process technology • Super high density cell design for extremely low .

Features

• Advanced trench process technology
• Super high density cell design for extremely low on resistance
• Reliable and rugged
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package Equivalent Circuit MTB040P04N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTB040P04N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel .