CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB04N03J3 BVDSS ID 30V 75A RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ) RDS(ON)@VGS=4.5V, ID=24A 4.7mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-.
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB04N03J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB04N03J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03J3
CYStek Product Spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB04N03AQ8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB04N03E3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB04N03F3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB04N03H8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB04N03Q8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB040P04N3 |
CYStech |
P-Channel Power MOSFET | |
7 | MTB040P04Q8 |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET | |
8 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
9 | MTB001D01-1 |
CSOT |
LCD Module | |
10 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
11 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
12 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |