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MTB04N03E3 |
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| Part Number | MTB04N03E3 |
| Manufacturer | CYStech Electronics |
| Description | CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTB04N03E3 BVDSS ID Features • Simple Drive ... |
| Features |
• Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy L=2mH, ID=26A, VDD=25V Repetitive Avalanche Energy L=0.05mH Total Power Dissipation TC... |
| Document |
 MTB04N03E3 Data Sheet
PDF 259.13KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB04N03AQ8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
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| 2 | MTB04N03F3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB04N03H8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB04N03J3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB04N03Q8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
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