Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
CYStech Electronics Corp. Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB04N03F3 BVDSS ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A Features • Low On-resistance • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS.
• Low On-resistance
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
30V 115A 3.4mΩ 4.3mΩ
Symbol
MTB04N03F3
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB04N03F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTB04N03F3
CYS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB04N03AQ8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | MTB04N03E3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB04N03H8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB04N03J3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB04N03Q8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTB040P04N3 |
CYStech |
P-Channel Power MOSFET |
|
| 7 | MTB040P04Q8 |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET |
|
| 8 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs |
|
| 9 | MTB001D01-1 |
CSOT |
LCD Module |
|
| 10 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 11 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 12 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|