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CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N10RI3 BVDSS ID@ VGS=10V, TC=25°C 100V 46A RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Character.
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB015N10RI3
Outline
TO-251S
G：Gate D：Drain S：Source
GDS
Ordering Information
Device MTB015N10RI3-0-UA-G
Package
TO-251S (RoHS compliant and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products
Product name
MTB015N10RI3
CYStek Product Specificati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB015N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | MTB015N10QH8 |
Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET |
|
| 3 | MTB015N10QQ8 |
Cystech Electonics |
N-Channel Enhancement Mode MOSFET |
|
| 4 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET |
|
| 9 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET |
|
| 10 | MTB011 |
Shindengen Electric |
High Output Interface Driver ICs |
|
| 11 | MTB011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 12 | MTB012N04J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|