CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB015N10QQ8 Spec. No. : C141Q8 Issued Date : 2015.10.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(.
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V 10A
12.2A 12.6 mΩ(typ) 17.4mΩ(typ)
Symbol
MTB015N10QQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device MTB015N10QQ8-0-T3-G
Package
SOP-8 (RoHS compliant & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Pa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB015N10QH8 |
Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET | |
2 | MTB015N10RI3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB015N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
5 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
6 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
8 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET | |
9 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET | |
10 | MTB011 |
Shindengen Electric |
High Output Interface Driver ICs | |
11 | MTB011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTB012N04J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |