MG200Q2YS60A - Toshiba Semiconductor

MG200Q2YS60A High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications · · · · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low ther.

Features

nal Terminal Layout 7 5 8 2.54 25.4 ± 0.6 6 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 3 1 4 2.54 2 2.54 Weight: 375 g 2 2001-08-28 62 1.0 MG200Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO .