MG200Q1ZS40 - Toshiba

MG200Q1ZS40 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIB.

Features

f voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off Time Reverse current Forward voltage Reverse recovery time Thermal resistance Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton tf toff IR VF trr Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 VCE = 5V, IC = 200mA IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz VR = 1200V IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Rth (j-c) MG200Q1ZS40 Min Typ. Max Unit ― ― ±20 ― ― 2.0 3.0 ― 6.0 ― 3.0 4.0 ― 24000 ― ― 0.3 0.6 ― 0..