MG200Q2YS50 - Toshiba

MG200Q2YS50 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a complate half bridge in one ackage. l The electrodes are isolated.

Features

Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance IGES ICES VGE (off) VCE (sat) Cies td(on) tr ton td(off) tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 200mA, VCE = 5V IC = 200A VGE = 15V Tj = 25°C Tj = 125°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 600V IC = 200A VGE = ±15V RG.