MG200Q1US41 - Toshiba

MG200Q1US41 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Rating.

Features

ector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 200mA ,VCE = 5V IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Transistor Diode MG200Q1US41 Min Typ. Max Unit ― ― ±40 ― ― 4.0 3.0 ― 6.0 ― 3.0 4.0 ― 24000 ― ― 0.3 0.6 ― 0.4 0.8 ― 0.2 0.5 ― 0.8 1.5 ― 2.0 3.0 µA mA V V.