MG200Q2YS65H - Toshiba Semiconductor

MG200Q2YS65H IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.) ― ― 2-109C4A Maximum Ratings (Tc = 2.

Features

ime Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon IF = 200 A, VGE = 0 IF = 200 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 4.7 W Tc = 125°C Inductive load VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 4.7 W Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 200 mA, VCE = 5 V IC = 200 A, VGE .