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MG200Q2YS60A |
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| Part Number | MG200Q2YS60A |
| Manufacturer | Mitsubishi Electric |
| Description | www.DataSheet4U.com MITSUBISHI IGBT Module MG200Q2YS60A MG200Q2YS60A(1200V/200A 2in1) High Power Switching Applications Motor Control Applications • • • • Integrates a complete half bridge power cir... |
| Features |
power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol ⎯ Rating 1200 ±20 200 400 200 A 400 2000 20 20 20 150 −40~125 −20~100 2500 (AC 1 min) 3 (M5) W V V mA °C °C °C V N･m Unit V V A
Electrical Characteristics (Tj = 25°C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volta... |
| Document |
 MG200Q2YS60A Data Sheet
PDF 247.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200Q2YS60A |
Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications |
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| 2 | MG200Q2YS65H |
Toshiba Semiconductor |
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| 3 | MG200Q2YS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
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| 4 | MG200Q2YS50 |
Toshiba |
Silicon N Channel IGBT GTR Module |
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| 5 | MG200Q1JS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
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