MG200Q1US51 - Toshiba

MG200Q1US51 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (.

Features

iconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA produc.