MDD1951 - MagnaChip

MDD1951 N-Channel MOSFET

The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V Applications  Inverte.

Features

 VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V Applications  Inverters  General purpose applications D D (DPAK) G S G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (Note 2) Pulsed Drain Current Power Dissipation for Single Operation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC (a) TA=25oC (b) TC=25oC TA=25oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal.