MDD1903 - MagnaChip

MDD1903 Single N-channel MOSFET

The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maxim.

Features

 VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Rating 100 ±20 11 7.3 30 39 15 -55~150 Unit V V A A A W oC Symbol RθJA RθJC Rating 52 3.2 Unit oC/W .