MDD1901 - MagnaChip

MDD1901 Single N-channel Trench MOSFET

The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1901 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D Absolute Maximum Ra.

Features

 VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) G S TC=25oC TC=100oC TC=25oC TC=100oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 100 ±20 40 24 80 70 28 200 -55~150 Unit V V A A A W mJ oC Symb.