MDD1904 - MagnaChip

MDD1904 Single N-channel MOSFET

The MDD1904 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 10.8A @VGS = 10V  RDS(ON) (MAX) < 140mΩ @VGS = 10V < 150mΩ @VGS = 6.0V D D .

Features

 VDS = 100V  ID = 10.8A @VGS = 10V  RDS(ON) (MAX) < 140mΩ @VGS = 10V < 150mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2021. Version 1.2 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 100 ±20.