The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features VDS = 100V ID = 11A @VGS = 10V RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute.
VDS = 100V ID = 11A @VGS = 10V RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Rating Unit 100 V ±20 V 11 A 7.3 A 30 A 39 W 15 -55~150 oC Symbol RθJA RθJC Rating .
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDD1903 |
MagnaChip |
Single N-channel MOSFET | |
2 | MDD1901 |
MagnaChip |
Single N-channel Trench MOSFET | |
3 | MDD1902 |
MagnaChip |
Single N-channel MOSFET | |
4 | MDD1904 |
MagnaChip |
Single N-channel MOSFET | |
5 | MDD1951 |
MagnaChip |
N-Channel MOSFET | |
6 | MDD1951RH |
MagnaChip |
N-Channel MOSFET | |
7 | MDD1051 |
MagnaChip |
Single N-channel MOSFET | |
8 | MDD1051RH |
INCHANGE |
N-Channel MOSFET | |
9 | MDD1080-18N7 |
IXYS |
Diode Modules | |
10 | MDD1080-24N7 |
IXYS |
Diode Modules | |
11 | MDD1080-28N7 |
IXYS |
Diode Modules | |
12 | MDD10N074RH |
MagnaChip |
N-channel MOSFET |