MDD1051 - MagnaChip

MDD1051 Single N-channel MOSFET

The MDD1051 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.0mΩ @VGS = 10V  100% U.

Features

 VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jul. 2021. Version 1.3 1 G S Symbol VDSS VGSS ID IDM .