MDD1902 - MagnaChip

MDD1902 Single N-channel MOSFET

The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1902 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.0V D D (DPAK) G S.

Features

 VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) Jun. 2021. Version 1.2 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V .