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MDD1951 |
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| Part Number | MDD1951 |
| Manufacturer | MagnaChip |
| Description | The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering sup... |
| Features |
VDS = 60V
ID = 17.9A @VGS = 10V
RDS(ON)
< 45.0mΩ@ VGS = 10V
< 55.0mΩ@ VGS = 4.5V
Applications
Inverters General purpose applications
D
D
(DPAK)
G S
G S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy Junction and Storage Temperature Range
TC=25oC (a) TA=25oC (b)
TC=25oC TA=25oC
(Note 3)
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal... |
| Document |
 MDD1951 Data Sheet
PDF 870.81KB |
| Distributor | Stock | Price | Buy |
|---|
