Magnachip Power Technology MDD10N074RH MDD10N074RH Single N-channel Trench MOSFET 100V 7.8mΩ 60A FEATURES • Trench power MOSFET technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg Tested APPLICATIONS • Specifically for Syncronous Rectification • Switching Applications D TO252 G S Top View Bottom View D KEY PERFORMANCE PARAMETERS VDS 1.
• Trench power MOSFET technology
• Very low on-resistance RDS(on)
• 100% Avalanche / Rg Tested
APPLICATIONS
• Specifically for Syncronous Rectification
• Switching Applications
D
TO252
G S
Top View
Bottom View
D
KEY PERFORMANCE PARAMETERS
VDS
100
V
RDS(on), typ.
0.0068
Ω
ID
60
A
QG Junction temperature, max
72
nC
150
oC
G S
ORDERING INFORMATION Type / Ordering Code
MDD10N074RH
Package TO252
http://www.magnachip.com
Marking MDD10N074
Packing Tape & Reel
RoHS Status Halogen Free
Feb. 2024. Rev. 1.2
1/7 All information provided in this document is subject to legal dis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDD1051 |
MagnaChip |
Single N-channel MOSFET | |
2 | MDD1051RH |
INCHANGE |
N-Channel MOSFET | |
3 | MDD1080-18N7 |
IXYS |
Diode Modules | |
4 | MDD1080-24N7 |
IXYS |
Diode Modules | |
5 | MDD1080-28N7 |
IXYS |
Diode Modules | |
6 | MDD142-08N1 |
IXYS |
Standard Rectifier | |
7 | MDD142-12N1 |
IXYS |
Standard Rectifier | |
8 | MDD142-14N1 |
IXYS |
Standard Rectifier | |
9 | MDD142-16N1 |
IXYS |
Standard Rectifier | |
10 | MDD142-18N1 |
IXYS |
Standard Rectifier | |
11 | MDD14N25C |
MagnaChip |
N-Channel MOSFET | |
12 | MDD14N25C |
INCHANGE |
N-Channel MOSFET |