Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features • • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12 .
•
•
•
• Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting
0.80
0.80 ± 0.05
Unit : mm
2
1
0.60
0.60
0.12 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current
* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to + 125 Unit V V A mA mA °C °C
1.20 − 0.03
+ 0.05
1.6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MA2SD19 |
Panasonic |
Silicon epitaxial planar type |
|
| 2 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type |
|
| 3 | MA2SD24 |
Panasonic |
Silicon epitaxial planar type |
|
| 4 | MA2SD25 |
Panasonic Semiconductor |
Silicon epitaxial planar type |
|
| 5 | MA2SD29 |
Panasonic Semiconductor |
Silicon epitaxial planar type |
|
| 6 | MA2SD30 |
Panasonic Semiconductor |
Schottky Barrier Diodes |
|
| 7 | MA2SD31 |
Panasonic Semiconductor |
Schottky Barrier Diodes |
|
| 8 | MA2SD32 |
Panasonic Semiconductor |
Schottky Barrier Diodes |
|
| 9 | MA2S077 |
Panasonic |
Silicon epitaxial planar type |
|
| 10 | MA2S111 |
Panasonic |
Silicon epitaxial planar type |
|
| 11 | MA2S304 |
Panasonic |
Silicon epitaxial planar type |
|
| 12 | MA2S331 |
Panasonic |
Silicon epitaxial planar type |
|