Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01.
• Low forward voltage: VF < 0.42 V (at IF = 100 mA)
• Optimum for high frequency rectification because of its short reverse recovery time trr .
0.80±0.05
0.60+0.05
–0.03 0.80+0.05
–0.03 1
(0.60)
0.12+0.05
–0.02
(0.80)
(0.60)
0.01±0.01
5˚
2 0.30±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0+0
–0.05
5˚
Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg
Rating 30 30 100 200 1 125 −55 to +125
Unit V
0.01±0.01
V mA mA A °C °C
1: Anode 2: Cathode SSMini.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2SD24 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA2SD25 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
3 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type | |
4 | MA2SD10 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA2SD19 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA2SD30 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
7 | MA2SD31 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
8 | MA2SD32 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
9 | MA2S077 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA2S111 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2S304 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA2S331 |
Panasonic |
Silicon epitaxial planar type |