MA2SD32 - Panasonic Semiconductor

MA2SD32 Schottky Barrier Diodes

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectification is possible. • Small reverse current: IR < 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ ■ Absolute Maximum Rati.

Features

• IF(AV) = 200 mA rectification is possible.
• Small reverse current: IR < 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05
  –0.03 0.80+0.05
  –0.03 1 (0.60) 0.12+0.05
  –0.02 (0.80) (0.60) 0.01±0.01 5˚
■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V 5˚ 2 0.30±0.05 0+0
  –0.05 0.01±0.01 mA mA A °C °C 1: Anode 2: Cathode SSMini2-F1 Packag.